Kyle Kirby

Senior Engineer
Process Integration
3DI/TSV R&D
Micron Technology

Kyle Kirby graduated in 1993 from Northern California's Humboldt State University with a Bachelor of Science in Industrial Technology. He joined Micron in 1994 in pursuit of a Manufacturing Engineering career. Kyle is now a Technologist in the Research and Development department focusing on process integration. He currently holds 45 US Patents relating to semiconductor processing and packaging. Now in his 14th year at Micron, with 5 years experience in TSV process development, he is concentrating on the integration of 300mm 3DI methods for memory applications.

Abstract: 3DI Solution for memory applications

There is a need to improve memory to processor performance in order to improve computing system efficiency. The system efficiency improvement needs to be accomplished with innovative solutions over brute force device performance improvement, which increases design and process complexity. With more applications sensitive to power dissipation (server) or battery life (mobile), there is a push for system designers to demand memory and logic systems that offer “more than Moore”. Three dimensional interconnect (3DI) package schemes have the ability to fulfill these needs by providing improved performance, decreased form factor, increased density, and increased bandwidth. 3D-packaging has the potential to drastically change packaging and stacking techniques with the use of Through Silicon Via’s (TSV). High density and high bandwidth DDR3 stacked packages >1600 Mbps as well as future memory systems and heterogeneous integration will require the use of TSV’s due to limitations with wire-bond approaches and on-chip interconnect performance.